r07ds0520ej0700 rev.7.00 page 1 of 9 jul 2, 2013 preliminary datasheet rjh1cm5dpq-e0 1200v - 15a - igbt application: inverter features ? short circuit withstand time (10 s typ.) ? low collector to emitter saturation voltage v ce(sat) = 2.1 v typ. (at i c = 15 a, v ge = 15 v, ta = 25c) ? built-in fast recovery diode (t rr = 200 ns typ.) in one package ? trench gate and thin wafer technology ? high speed switching t f = 125 ns typ. (at v cc = 600 v, v ge = 15 v, i c = 15 a, rg = 5 , ta = 25c, inductive load) outline 1. gate 2. collecto r 3. emitter 4. collecto r c g e 1 2 3 4 renesas package code: prss0003ze-a (package name: to-247) absolute maximum ratings (ta = 25c) item symbol ratings unit collector to emitter voltage / diode reverse voltage v ces / v r 1200 v gate to emitter voltage v ges 30 v collector current tc = 25c i c 30 a tc = 100c i c 15 a collector peak current i c (peak) note1 45 a collector to emitter diode forward current i df 15 a collector to emitter diode forward peak current i df (peak) note1 45 a collector dissipation p c note2 245 w junction to case the rmal resistance (igbt) j-c note2 0.51 c/w junction to case thermal resistance (diode) j-cd note2 0.69 c/w junction temperature tj 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. value at tc = 25 c r07ds0520ej0700 rev.7.00 jul 2, 2013
rjh1cm5dpq-e0 preliminary r07ds0520ej0700 rev.7.00 page 2 of 9 jul 2, 2013 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions zero gate voltage collector current / diode reverse current i ces /i r ? ? 5 a v ce = 1200 v, v ge = 0 gate to emitter leak current i ges ? ? 1 a v ge = 30 v, v ce = 0 gate to emitter cutoff voltage v ge(off) 4.5 ? 6.5 v v ce = 10 v, i c = 1 ma collector to emitter saturation voltage v ce(sat) ? 2.1 2.7 v i c = 15 a, v ge = 15 v note3 v ce(sat) ? 2.9 ? v i c = 30 a, v ge = 15 v note3 input capacitance cies ? 1150 ? pf v ce = 25 v v ge = 0 f = 1 mhz output capacitance coes ? 70 ? pf reveres transfer capacitance cres ? 30 ? pf total gate charge qg ? 74 ? nc v ge = 15 v v ce = 300 v i c = 15 a gate to emitter charge qge ? 10 ? nc gate to collector charge qgc ? 40 ? nc turn-on delay time t d(on) ? 40 ? ns v cc = 600 v v ge = 15 v i c = 15 a rg = 5 inductive load rise time t r ? 18 ? ns turn-off delay time t d(off) ? 100 ? ns fall time t f ? 125 ? ns turn-on energy e on ? 1.6 ? mj turn-off energy e off ? 0.7 ? mj total switching energy e total ? 2.3 ? mj short circuit withstand time t sc ? 10 ? s v cc 720 v, v ge = 15 v tc 125c frd forward voltage v f ? 1.6 ? v i f = 15 a note3 frd reverse recovery time t rr ? 200 ? ns i f = 15 a di f /dt = 100 a/ s frd reverse recovery charge q rr ? 0.8 ? c frd peak reverse recovery current i rr ? 9.5 ? a notes: 3. pulse test.
rjh1cm5dpq-e0 preliminary r07ds0520ej0700 rev.7.00 page 3 of 9 jul 2, 2013 main characteristics 4 0 5 0 30 20 10 co ll ector c u rrent i c (a) ca s e t em p erat u re t c ( c) m a xi m u m d c co ll ector c u rrent vs. ca s e t em p erat u re 02 55 0100 7 5 12 5 1 5 0 17 5 02 55 0100 7 5 12 5 1 5 0 17 5 co ll ector dissip at i on pc ( w ) ca s e t em p erat u re t c ( c) co ll ector dissip at i on vs. ca s e t em p erat u re 300 2 5 0 200 1 5 0 100 5 0 0 4 0 30 20 10 0 6 0 5 0 30 4 0 20 10 0 co ll ector c u rrent i c (a) co ll ector to e m i tter v o l tage v c e ( v ) m a xi m u m sa f e o p erat i on area co ll ector c u rrent i c (a) co ll ector to e m i tter v o l tage v c e ( v ) tu rn - o ff soa 0 4 00 8 00 1200 1 6 00 1000 100 1 10 0 . 1 1100 10 10000 1000 t c = 2 5 c s i ng l e puls e 100 s p w = 10 s typi ca l o u t pu t c h aracter is t i c s 4 0 5 0 30 20 10 123 45 co ll ector c u rrent i c (a) 0 0 co ll ector to e m i tter v o l tage v c e ( v ) t c = 2 5 c p uls e t e s t v g e = 8 v 1 5 v 1 8 v 1 8 v 10 v 12 v typi ca l o u t pu t c h aracter is t i c s 123 45 co ll ector c u rrent i c (a) 0 co ll ector to e m i tter v o l tage v c e ( v ) t c = 1 5 0 c p uls e t e s t v g e = 8 v 10 v 12 v 1 5 v 0
rjh1cm5dpq-e0 preliminary r07ds0520ej0700 rev.7.00 page 4 of 9 jul 2, 2013 20 16 12 8 4 40 50 30 20 10 3 2 4 6 5 1 5 4 3 2 10 8 6 4 2 0 typical transfer characteristics collector current i c (a) gate to emitter voltage v ge (v) gate to emitter cutoff voltage vs. case temparature (typical) ? 25 0 25 75 125 50 100 150 gate to emitter cutoff voltage v ge(off) (v) v ce = 10 v pulse test case temparature tc ( c) 1 ma i c = 10 ma gate to emitter voltage v ge (v) 1 3 2 4 6 5 1 6 8 12 20 16 10 18 14 6 8 12 20 16 10 18 14 collector to emitter satularion voltage vs. gate to emitter voltage (typical) collector to emitter satularion voltage vs. gate to emitter voltage (typical) collector to emitter satularion voltage v ce(sat) (v) collector to emitter satularion voltage v ce(sat) (v) gate to emitter voltage v ge (v) tc = 150 c pulse test tc = 25 c pulse test i c = 30 a 15 a 7.5 a 7.5 a i c = 30 a 15 a 04812 20 16 0 150 c v ce = 10 v pulse test collector to emitter saturation voltage vs. case temparature (typical) ? 25 0 25 75 125 50 100 150 collector to emitter saturation voltage v ce(sat) (v) case temparature tc ( c) 15 a 7.5 a i c = 30 a v ge = 15 v pulse test 0 frequency characteristics (typical) collector current i c(rms) (a) frequency f (khz) 1 100 10 1000 tj = 125c tc = 90c v ce = 400 v v ge = 15 v rg = 5 duty = 50% 0 collector current wave (square wave) tc = 25 c
rjh1cm5dpq-e0 preliminary r07ds0520ej0700 rev.7.00 page 5 of 9 jul 2, 2013 0.1 10 1 100 1 100 10 1000 0.1 10 1 100 1 100 10 1000 50 25 150 75 125 100 switching characteristics (typical) (5) t d(on) case temperature tc (c) (inductive load) switching times t (ns) v cc = 600 v, v ge = 15 v i c = 15 a, rg = 5 t f t d(off) t r gate resistance rg ( ) (inductive load) gate resistance rg ( ) (inductive load) eoff eon swithing energy losses e (mj) switching times t (ns) switching characteristics (typical) (3) switching characteristics (typical) (4) 110 100 0.1 10 1 100 swithing energy losses e (mj) 1 10 100 1 10 100 1 10 100 collector current i c (a) (inductive load) eoff eon 1 100 10 1000 switching characteristics (typical) (1) switching characteristics (typical) (2) collector current i c (a) (inductive load) switching times t (ns) v cc = 600 v, v ge = 15 v rg = 5 , tc = 150 c t d(off) t d(on) t f t r t d(off) t d(on) t f t r v cc = 600 v, v ge = 15 v i c = 15 a, tc = 150 c v cc = 600 v, v ge = 15 v i c = 15 a, tc = 150 c v cc = 600 v, v ge = 15 v rg = 5 , tc = 150 c v cc = 600 v, v ge = 15 v i c = 15 a, rg = 5 50 25 150 75 125 100 case temperature tc (c) (inductive load) switching characteristics (typical) (6) eoff eon swithing energy losses e (mj)
rjh1cm5dpq-e0 preliminary r07ds0520ej0700 rev.7.00 page 6 of 9 jul 2, 2013 10 5 30 25 20 15 0 1.0 0.5 3.0 2.5 2.0 1.5 0 diode current slope di f /dt (a/ s) reverse recovery time t rr (ns) reverse recovery time vs. diode current slope (typical) diode current slope di f /dt (a/ s) reverse recovery current i rr (a) reverse recovery current vs. diode current slope (typical) diode current slope di f /dt (a/ s) reverse recovery charge q rr ( c) reverse recovery charge vs. diode current slope (typical) c-e diode forward voltage v cef (v) forward current vs. forward voltage (typical) forward current i f (a) 0 01234 tc = 25 c 150 c v ce = 0 v pulse test capacitance c (pf) 1 10 100 1000 10000 gate charge qg (nc) dynamic input characteristics (typical) typical capacitance vs. collector to emitter voltage 800 600 400 200 0 0 16 12 8 4 0 20 40 60 80 100 v ge v ce collector to emitter voltage v ce (v) collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) i c = 15 a v cc = 300 v tc = 25 c v ge = 0 v f = 1 mhz tc = 25 c cies coes cres 400 200 1000 800 600 0 0 40 80 200 120 160 0 40 80 200 120 160 0 40 80 200 120 160 i f = 15 a i f = 15 a i f = 15 a tc = 150 c 25 c tc = 150 c 25 c 0 50 100 200 150 250 300 tc = 150 c 25 c 40 50 30 20 10
rjh1cm5dpq-e0 preliminary r07ds0520ej0700 rev.7.00 page 7 of 9 jul 2, 2013 0.01 1 0.1 10 100 1 m 10 m 100 m 1 10 p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 0.69 c/w, tc = 25 c 0.2 0.1 0.5 d = 1 tc = 25 c pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width (igbt) pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width (diode) 0.01 0.1 10 1 100 1 m 10 m 100 m 1 10 100 100 p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 0.51 c/w, tc = 25 c tc = 25 c 0.2 0.1 0.5 d = 1 0.01 0.02 0.05 1 shot pulse 0.01 0.02 0.05 1 shot pulse
rjh1cm5dpq-e0 preliminary r07ds0520ej0700 rev.7.00 page 8 of 9 jul 2, 2013 switching time test circuit diode reverse recovery time test circuit waveform waveform diode clamp d.u.t d.u.t rg l v cc v cc t rr i rr di f /dt 0.9 i rr i f i f rg t d(off) t d(on) t f t r 90% 90% 90% 10% 10% 10% v ge i c 0.5 i rr l 0
rjh1cm5dpq-e0 preliminary r07ds0520ej0700 rev.7.00 page 9 of 9 jul 2, 2013 package dimension 15 . 9 4 0 . 19 5 .4 5 6 . 15 21 . 1 3 0 .33 20 . 19 0 .38 4. 5 ma x 3. 60 0 . 1 2 . 10 1 . 2 7 0 . 1 3 5 .4 5 2 .4 1 0 .7 1 0 . 1 5 . 02 0 . 19 un i t : mm ? 6 . 0g m a ss [t yp .] ? prss000 3ze-a r ene s a s code jeita pac k age code prev i ous code pac k age n ame to- 2 47 1 7. 6 3 1 3. 26 + 0 . 1 ? 0 . 2 ordering information orderable part number quan tity shipping container rjh1cm5dpq-e0#t2 450 pcs tube
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